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By J. Chandra, A.C. Scott

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05 0 −20 −15 −10 −5 0 5 VG [V] Fig. , with ambient exposure to H2 O and O2 in the air, and to light and temperature fluctuations (Street et al. 2006). The gate contact and the drain contact have been biased with −15 V. The effect is mostly a shift of the VT unprotected pentacene transistors that were shelved in dark under ambient conditions. 8 V shift of VT after nine months shelving. This shift is reversible when the transistors are shelved in a vacuum environment. Encapsulation of the circuits directly after the production with a hydrophobic material is introduced in Pannemann et al.

The foil is glued on top of a rigid carrier, which is typically a Si wafer. After the production process the foil is delaminated from the carrier and the flexible foil with the circuits is left over. 28 2 Organic Thin-Film Transistor Technology Pentacene 100nm 30nm Au 350nm 30nm Au S D Met2 Organic Insulator Met1 G Z 25µm PEN Substrate Y X Fig. 11 Cross-sectional schematic view of a transistor architecture in the pentacene transistor technology. The S, D, and G contacts correspond to the source, drain, and gate of the transistor The technology is extensively elaborated in Gelinck et al.

A reactive Al layer is deposited that reacts with the semiconductor layer. Self-aligned source and drain contacts are formed without overlap with the gate. 4 Technology in This Work The existing organic electronics technologies are all very novel and undergo processing changes along the road that improve the transistor behavior. Consequently, it is often difficult to compare circuits fabricated in different technologies. Therefore, it is important to start this dissertation about integrated organic circuits with a brief overview on the applied technology and its features.

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