Download CMOS 60-GHz and E-band Power Amplifiers and Transmitters by Dixian Zhao, Patrick Reynaert PDF

By Dixian Zhao, Patrick Reynaert

This booklet makes a speciality of the improvement of layout ideas and methodologies for 60-GHz and E-band energy amplifiers and transmitters at gadget, circuit and structure degrees. The authors express the hot improvement of millimeter-wave layout innovations, specially of energy amplifiers and transmitters, and provides novel layout thoughts, akin to “power transistor structure” and “4-way parallel-series energy combiner”, that may improve the output strength and potency of strength amplifiers in a compact silicon quarter. 5 state of the art 60-GHz and E-band designs with measured effects are confirmed to end up the effectiveness of the layout techniques and hands-on methodologies provided. This publication serves as a necessary reference for circuit designers to increase millimeter-wave construction blocks for destiny 5G applications.

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IEEE J. Solid State Circuits 47(7), 1659–1671 (2012) 19. K. Okada, N. Li, K. Matsushita, K. Bunsen, R. Murakami, A. Musa, T. Sato, H. Asada, N. Takayama, S. Ito, W. Chaivipas, R. Minami, T. Yamaguchi, Y. Takeuchi, H. Yamagishi, M. Noda, A. 3c. IEEE J. Solid State Circuits 46, 2988–3004 (2011) 20. L. Couch, Digital and Analog Communication Systems, 7th edn. (Pearson Prentice Hall, New Jersey, 2007) 21. M. Khanpour, K. Tang, P. Garcia, S. Voinigescu, A wideband w-band receiver front-end in 65-nm cmos.

The influence of metal fills will be discussed in terms of different density and shape of the metal fill. ADS Momentum is used to characterize the passives discussed in Sect. 3. The conclusion is given in Sect. 4. © Springer International Publishing Switzerland 2015 D. Zhao, P. 1 Influence of Device Parasitics and Long Intraconnects Device and interconnect parasitics are the two dominant causes that limit the output power and efficiency of a PA at mm-Wave frequencies. As the operating frequency gets closer to a fraction of the transistor cut-off frequency (fT =fMAX ), device parasitics present a large portion of the total impedance at each node, thereby reducing the power gain.

E. Kaymaksut P. Reynaert, Transformer-based uneven doherty power amplifier in 90 nm cmos for wlan applications. IEEE J. Solid State Circuits 47(7), 1659–1671 (2012) 19. K. Okada, N. Li, K. Matsushita, K. Bunsen, R. Murakami, A. Musa, T. Sato, H. Asada, N. Takayama, S. Ito, W. Chaivipas, R. Minami, T. Yamaguchi, Y. Takeuchi, H. Yamagishi, M. Noda, A. 3c. IEEE J. Solid State Circuits 46, 2988–3004 (2011) 20. L. Couch, Digital and Analog Communication Systems, 7th edn. (Pearson Prentice Hall, New Jersey, 2007) 21.

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