Download Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.) PDF

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This publication presents a single-source connection with one of many more difficult reliability matters plaguing glossy semiconductor applied sciences, unfavorable bias temperature instability. Readers will make the most of state-of-the paintings assurance of analysis in subject matters corresponding to time established illness spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon thought, compact modeling with RC ladders and implications on gadget reliability and lifetime.

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Extra info for Bias Temperature Instability for Devices and Circuits

Sample text

After the 1,000 s had elapsed, the heating current was taken away and the device cooled down rapidly toward the individual ambient temperature which was defined by the temperature of the underlying thermo chuck. When intending to study recovery at −40 ◦C, the chuck has to be at that temperature already before stress. Naturally, the lower the base temperature of the thermo chuck, the greater the required power supply for the poly-heater to reach the unique stress temperature of 125 ◦C, the lower the base temperature of the thermo chuck.

6b the same experimental sequence as in Fig. 6a was performed but this time the drain current of the device was recorded as a representative for the Si/SiO2 interface temperature. By using the results of Fig. 2a one can calculate the evolution of the device temperature TDV from ID . As can be seen in Fig. 6b, when turning the heater on abruptly, it takes up to 10 s until the device has stabilized at its calibrated target temperature. The larger the temperature difference, the longer it takes to reach the target temperature.

25 Typical voltage time trace of a VRS BTI characterization procedure with spot-Id sense measurement. The pre-stress Id–Vg characteristic is used to extract the VRS-induced voltage shift A schematic of the voltage time trace during VRS test for transistor structures employing the spot-Id method is shown in Fig. 25. Analogous to the spot-Id measurement in the CVS method, first, a pre-stress characterization is performed biasing the device in the linear regime. Then, a sequence of stress and intermittent characterization cycles is carried out with sequentially increasing stress bias.

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